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| MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900HC-90S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE RM900HC-90S IF ................................................................... 900A VRRM ...................................................... 4500V Insulated Type 1-element in a Pack AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 57 0.25 57 0.25 4-M8 NUTS 29.5 20 >PPS< K (C) K (C) K1 C K2 C 124 0.25 High Voltage Diode Module 38 +1.0 0 5 LABEL CM A1 140 40 E A2 E 15 C E G A (E) A (E) CIRCUIT DIAGRAM 6-7 MOUNTING HOLES 61.5 18 Screwing depth min. 16.5 May 2009 1 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900HC-90S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) IF IFSM I2t Viso Tj Top Tstg Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current Surge forward current Current-squared, time integration Isolation voltage Junction temperature Operating temperature Storage temperature Conditions Tj = 25 C Tj = 25 C Tj = 25 C TC = 25 C Tj = 25 C start, tw = 8.3 ms Half sign wave Tj = 25 C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. -- -- -- Ratings 4500 4500 3200 900 7200 216 6000 -40 ~ +150 -40 ~ +125 -40 ~ +125 Unit V V V A A kA2s V C C C ELECTRICAL CHARACTERISTICS Symbol IRRM VFM trr Irr Qrr Erec Item Repetitive reverse current Forward voltage (Note 1) VRM = VRRM IF = 900 A Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Min -- -- -- -- -- -- -- -- Limits Typ -- 10 4.80 4.15 1.0 840 750 1.0 Max 5 30 5.80 -- -- -- -- -- Unit mA V s A C J/P Reverse recovery time VR = 2250 V, IF = 900 A Reverse recovery current di/dt = -1850 A/s Reverse recovery charge Reverse recovery energy (Note 2) Ls=100nH, Tj = 125 C Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1VR x 0.1Irr x dt. High Voltage Diode Module May 2009 2 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900HC-90S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c) Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to case Case to Fin, grease = 1W/m*K D(c-f)=100m Min -- -- Limits Typ -- 16.0 Max 21.0 -- Unit K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms m CTI Da Ds LP CE RCC'+EE' Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance Conditions M8: Main terminals screw M6: Mounting screw -- -- -- -- -- Tc = 25 C Min 7.0 3.0 -- 600 19.5 32 -- -- Limits Typ -- -- 1.0 -- -- -- 17.5 0.13 Max 13.0 6.0 -- -- -- -- -- -- Unit N*m N*m kg -- mm mm nH m PERFORMANCE CURVES REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 2.0 REVERSE RECOVERY ENERGY Erec (J/p) FORWARD CHARACTERISTICS (TYPICAL) 1800 1600 1400 1200 1000 800 600 400 200 0 Tj = 25C Tj = 125C 0 2 4 6 8 0 0 VR = 2250V, di/dt = 1850A/s Tj = 125C, LS = 100nH FORWARD CURRENT IF (A) 1.5 1.0 0.5 500 1000 1500 2000 FORWARD VOLTAGE VF (V) FORWARD CURRENT IF (A) High Voltage Diode Module May 2009 3 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900HC-90S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 104 2500 VR 3200V, di/dt 3300A/s Tj = 125C REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CURRENT Irr (A) 7 5 3 2 VR = 2250V, di/dt = 1850A/s Tj = 125C, LS = 100nH REVERSE RECOVERY TIME trr (s) 3 2 2000 101 7 5 3 2 Irr 103 7 5 3 2 1500 trr 100 7 5 3 2 1000 102 7 5 3 2 7 103 7 104 500 10-1 2 10 101 2 3 45 2 3 45 0 0 1000 2000 3000 4000 5000 FORWARD CURRENT IF (A) REVERSE VOLTAGE VR (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1.2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Rth(j-c) = 21K/kW 1.0 0.8 Z th( j -c ) ( t ) = Ri [K/kW] Ri 1-exp i=1 1 0.0059 0.0002 2 0.0978 0.0074 n 0.6 i [sec] 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) High Voltage Diode Module 4 - t ti 3 0.6571 0.0732 4 0.2392 0.4488 May 2009 |
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